Stable charged antiparallel domain walls in hyperferroelectrics
نویسندگان
چکیده
منابع مشابه
Free-electron gas at charged domain walls in insulating BaTiO3
Hetero interfaces between metal-oxides display pronounced phenomena such as semiconductor-metal transitions, magnetoresistance, the quantum hall effect and superconductivity. Similar effects at compositionally homogeneous interfaces including ferroic domain walls are expected. Unlike hetero interfaces, domain walls can be created, displaced, annihilated and recreated inside a functioning device...
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ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2017
ISSN: 0953-8984,1361-648X
DOI: 10.1088/1361-648x/aa6f95